Lattice-matched and lattice-mismatched growth on novel GaAs substrate orientations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. Molecular‐beam‐epitaxial growth of GaAs(331)
2. Summary Abstract: Improved material properties of GaAs grown on novel substrate orientations
3. Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Piezoelectric fields in one- and two-dimensional heterostructures fabricated on high-index surfaces;Microelectronics Journal;1995-12
2. Elastic lattice deformation of semiconductor heterostructures grown on arbitrarily oriented substrate surfaces;Physical Review B;1993-07-15
3. Evidence for facets with 〈210〉 azimuth in molecular beam epitaxial growth on patterned GaAs(001) substrates;Applied Physics Letters;1992-04-20
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