Slider LPE growth of MCT using in situ Te-solution preparation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm
2. Slider LPE of Hg1-xCdxTe using mercury pressure controlled growth solutions
3. Growth and properties of Hg1-x Cdx Te epitaxial layers
4. Lpe growth of Hgl−xCdxTe using conventional slider boat and effects of annealing on properties of the epilayers
5. Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te system
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1. A new surface-flattening method using single-point diamond turning (SPDT) and its effects on LPE HgCdTe photodiodes;Semiconductor Science and Technology;2005-11-28
2. Liquid phase epitaxial growth of HgCdTe using a modified horizontal slider;Journal of Crystal Growth;2003-05
3. Surface morphology of Hg0.8Cd0.2Te epilayers grown by LPE using horizontal slider;Applied Surface Science;2003-02
4. Atomic force microscopy studies of Hg[sub 1−x]Cd[sub x]Te thin films grown by isothermal vapor phase epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-09
5. Investigation of equilibrium partial pressures over (Hg1 − xCdx)yTe1 − y(y < 0.5) melts;Journal of Crystal Growth;1997-01
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