A new high purity doping source for CVD Si: Ga epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Gallium doped epitaxial silicon
2. The Chemistry of Gallium;Sheka,1966
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices;Japanese Journal of Applied Physics;2023-01-31
2. Photolysis–laser-induced fluorescence diagnostic for GaCl;Applied Optics;1993-09-20
3. Growth methods for high purity Ge and Ge: Ga homoepitaxy;Journal of Crystal Growth;1993-04
4. High temperature characterization of the GaCl3/SiH4/H2chemical vapor deposition reaction mixture;Journal of Applied Physics;1993-03
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