Phosphine and arsine decomposition in CVD reactors for InP and InGaAs growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
2. Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelength
3. Prevention of Surface Corrugation Thermal Deformation for InGaAsP/InP DFB Lasers
4. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
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