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Self-compensation in halogen doped CdTe grown by molecular beam epitaxy

  • Published:1996-04 Issue:1-4 Volume:161 Page:214-218
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Fischer F.,Waag A.,Worschech L.,Ossau W.,Scholl S.,Landwehr G.,Mäkinen J.,Hautojärvi P.,Corbel C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of dopant concentration and annealing treatments on N-type Iodine doped CdTe;Journal of Alloys and Compounds;2023-10

2. Impurity Compensation;CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications;2010

3. Impurity doping and compensation mechanisms in CdTe;Thin Solid Films;2001-05

4. Wide band-gap II–VI compounds—can efficient doping be achieved?;Vacuum;1998-07

5. Review of defect investigations by means of positron annihilation in II-VI compound semiconductors;Applied Physics A: Materials Science & Processing;1998-06-01
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