Inheritance of zinc-blende structure from substrate in growth of GaN by MOCVD-Reference-Cited by-同舟云学术

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Inheritance of zinc-blende structure from substrate in growth of GaN by MOCVD

Published:1996-11 Issue:1 Volume:169 Page:185-189
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hashimoto Tadao,Imafuji Osamu,Ishida Masahiro,Terakoshi Yoshitami,Sugino Takashi,Yoshikawa Akio,Itoh Kunio,Shirafuji Junji

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

2. Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device

3. Tech. Digest of Int. Electron Devices Meeting;Egawa,1995

4. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

5. Structure Control of GaN Films Grown on (001) GaAs Substrates by GaAs Surface Pretreatments

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. XPS investigation of ion beam induced conversion of GaAs(001) surface into GaN overlayer;Applied Surface Science;2009-10

2. Excimer Laser Annealing with a Line Beam for Improvement of Structural and Optical Properties of Polycrystalline GaN;Japanese Journal of Applied Physics;2003-12-10

3. Effect of excimer laser irradiation on polycrystalline GaN;Journal of Crystal Growth;2003-06

4. Correlation between structural and optical properties of polycrystalline GaN;Journal of Crystal Growth;2003-05

5. Metal–organic chemical vapor deposition growth of GaN thin film on 3C-SiC/Si(111) substrate using various buffer layers;Thin Solid Films;2001-12

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