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Impurity segregation in CdxHg1-xTe crystals grown using ACRT

  • Published:1988-10 Issue:1-2 Volume:92 Page:1-7
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Capper P.,Gale I.G.,Grainger F.,Roberts J.A.,Jones C.L.,Gosney J.J.G.,Kenworthy I.,Ard C.K.,Coates W.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical Bridgman Growth of Binary Compound Semiconductors;Handbook of Crystal Growth;2015

2. MERCURY COMPOUNDS;Compound Semiconductor Bulk Materials and Characterizations;2012-12

3. Control of growth interface shape using vibroconvective stirring applied to vertical Bridgman growth;Journal of Crystal Growth;2005-08

4. Low-energy methods of mass transfer control at crystal growth;Journal of Crystal Growth;2005-02

5. Vibroconvective mixing applied to vertical Bridgman growth;Journal of Crystal Growth;2003-10
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