Growth conditions of high purity TiC single crystal using the floating zone method-Reference-Cited by-同舟云学术

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Growth conditions of high purity TiC single crystal using the floating zone method

Published:1988-10 Issue:1-2 Volume:92 Page:8-12
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Otani Shigeki,Tanaka Takaho,Ishizawa Yoshio

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Field emission properties of surface-processed TiC(110) field emitter.

2. Growth of single crystals of the IVa group transition metal carbides by a floating zone technique

3. Preparation of TiCx single crystals with maximum carbon content by a floating zone technique

4. Temperature distribution in TiC crystal rod prepared by r.f. floating zone technique

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Floating-zone growth of CrB2 single crystals;Journal of Alloys and Compounds;2008-04

2. Processing of single crystals for high temperature applications;Journal of Materials Processing Technology;2001-06

3. Bulk Crystal Growth;Electric Refractory Materials;2000-08-24

4. Floating zone growth and high-temperature hardness of YB4 and YB6 single crystals;Journal of Crystal Growth;2000-08

5. Preparation of ZrB2 single crystals by the floating zone method;Journal of Crystal Growth;1996-08

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