Reverse contrast imaging in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Characteristics of near-band-edge absorption processes in bulk GaAs;Physica E: Low-dimensional Systems and Nanostructures;2004-10
2. Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies;Applied Physics Letters;1995-05-08
3. Effect of non-stoichiometry on near-band-edge absorption and non- radiative recombination in bulk GaAs;Materials Science and Engineering: B;1992-06
4. Relationship between near bandedge absorption and photoluminescence efficiency in semi-insulating GaAs;Journal of Electronic Materials;1992-03
5. Persistent Photo-Hall Phenomenon and Near-Bandedge Absorption in Lightly N-Type Lec GaAs;MRS Proceedings;1992
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