Si dangling bonds on Si(100) surface during gas-source molecular beam epitaxy with Si2H6
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. The reaction of Si(100) 2×1 with NO and NH3: The role of surface dangling bonds
2. Thermal and electron-beam-induced reaction of disilane on Si(100)-(2×1)
3. Silane gas-source atomic layer epitaxy
4. Hydrogen coverage during Si growth from SiH4and Si2H6
5. Interaction ofSi2H6with a Si(111)-77 surface
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3. Surface dynamics on a high-temperature Si surface under a high-pressure reactive gas atmosphere studied by time-resolved UPS;Journal of Electron Spectroscopy and Related Phenomena;1999-06
4. Observation of dimer dangling bonds on a Si(001)2×1 surface by grazing-incidence reflection high energy electron diffraction and Auger electron spectroscopy;Applied Surface Science;1998-06
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