Influence of hydrogen radicals on the reduction of carbon incorporation into chemical beam epitaxial GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Surface emitting lasers grown by chemical beam epitaxy
2. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources
3. Gallium arsenide thin films by low‐temperature photochemical processes
4. Low carbon incorporation in GaAs grown by chemical beam epitaxy using unprecracked arsine, trimethylgallium and triethylgallium
5. Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs
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1. Surface Kinetics and Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium;Advances in the Understanding of Crystal Growth Mechanisms;1999
2. Surface Cleaning of Si-Doped/Undoped GaAs Substrates;Japanese Journal of Applied Physics;1995-09-15
3. Real-time scanning microprobe reflection high-energy electron diffraction observations of the cleaning process of GaAs substrates;Journal of Crystal Growth;1995-05
4. Real-Time Observations on the Cleaning Process of Patterned GaAs Substrates;Japanese Journal of Applied Physics;1995-04-01
5. Growth of GaAs by molecular-beam epitaxy using trisdimethylaminoarsine;Journal of Crystal Growth;1995-04
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