Plasma-cracked supply of group V and group VI elements for low temperature epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Plasma-assisted epitaxy of InAs layers on GaAs
2. Plasma-Assisted Epitaxial Growth of P-Type ZnSe in Nitrogen-Based Plasma
3. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
4. The effect of As2and As4molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs
5. Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2source
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Texture and morphology variations in (In,Ga)2 Se3 and Cu(In,Ga)Se2 thin films grown with various Se source conditions;Progress in Photovoltaics: Research and Applications;2011-11-10
2. Growth of polycrystalline Cu(In,Ga)Se2 thin films using a radio frequency-cracked Se-radical beam source and application for photovoltaic devices;Applied Physics Letters;2007-07-23
3. Preparation of Cu(In1-xGax)Se2 Thin Films and Solar Cells Using a Se-radical Beam Source;MRS Proceedings;2007
4. Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker;Journal of Crystal Growth;1996-04
5. Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker;Selected Topics in Group IV and II–VI Semiconductors;1996
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3