Direct growth of Hg1-xCdxTe alloys in a cold-wall, annular reactant inlet inverted-vertical organometallic vapor phase epitaxy reactor at 300°C
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Growth of CdxHg1−xTe: Comparison of some properties with the predictions of two melt growth models
2. Comments on segregation during bridgman growth of CdxHg1-xTe
3. One-dimensional analysis of segregation in directionally solidified HgCdTe
4. THM, a breakthrough in Hg1−xCdxTe bulk metallurgy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
2. Metal-organic vapour phase epitaxy;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
3. Methyl(allyl)telluride as a Te precursor for growth of (Hg,Cd)Te by metalorganic vapour phase epitaxy;Journal of Crystal Growth;1994-12
4. Electrical characterization of Hg1−xCdxTe (0.126≤x≤0.58) grown by organometallic vapor phase epitaxy;Journal of Applied Physics;1994-07
5. Metalorganic vapour phase epitaxy of mercury cadmium telluride;Progress in Crystal Growth and Characterization of Materials;1994-01
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