OMVPE growth of GaAs using dimethylarsine-Reference-Cited by-同舟云学术

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OMVPE growth of GaAs using dimethylarsine

Published:1989-07 Issue:3 Volume:96 Page:497-504
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Chen C.H.,Reihlen E.H.,Stringfellow G.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference41 articles.

1. CRC Handbook of Laboratory Safety,1967

2. Theory and Practice of Organometallic Vapor Phase Epitaxy;Stringfellow,1989

3. A MOCVD reactor safety system for a production environment

4. Integrated safety system for MOCVD laboratory

5. Ordered structures in GaAs0.5Sb0.5alloys grown by organometallic vapor phase epitaxy

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1. Metal Organic Vapor Phase Epitaxy Chemical Kinetics;Handbook of Crystal Growth;2015

2. Gallium arsenide heterostructures;Handbook of Advanced Electronic and Photonic Materials and Devices;2001

3. Chapter 2 Gallium arsenide heterostructures;Processing and Properties of Compound Semiconductors;2001

4. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999

5. The growth of GaAs/AlxGa1-xAs with DEA1H-NMe3 as Al source and MEAs and DMAAs as liquid As compounds;Journal of Crystal Growth;1994-12

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