Improved nucleation and a planar interface in LPE grown Pb1−xSnxTe heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
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Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of liquid‐phase epitaxy grown Pb1−xSnxTe homostructure diode lasers with Ga‐doped cladding layer;Journal of Applied Physics;1988-11
2. Structural and electrical properties of Pb1 −xSnxTe films grown by molecular beam epitaxy;Physica Status Solidi (a);1988-01-16
3. Study of Pb1-xSnxTe Epitaxial Films Deposited by MBE Technique;IETE Journal of Research;1986-09
4. Lattice mismatch and the nature of dissolution in the LPE of Pb-Salt compounds;Journal of Electronic Materials;1986-05
5. Fabrication of Pb1‐xSnxTe/PbTe heterojunctions by liquid phase epitaxy;Journal of the Chinese Institute of Engineers;1984-10
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