Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE-Reference-Cited by-同舟云学术

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Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE

Published:1993-02 Issue:1-4 Volume:127 Page:62-67
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Larkins E.C.,Bender G.,Schneider H.,Ralston J.D.,Wagner J.,Rothemund W.,Dischler B.,Fleissner J.,Koidl P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. High-Speed Electronics and Optoelectronics;Ralston;SPIE Proc.,1992

2. 10 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs

3. Diffusive electrical conduction in high‐speedp‐i‐nphotodetectors

4. Electroabsorption in an InGaAs/GaAs strained‐layer multiple quantum well structure

5. Wannier–Stark localization in a strained InGaAs/GaAs superlattice

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MBE growth of high performance very long wavelength InGaAs/GaAs quantum well infrared photodetectors;Journal of Physics D: Applied Physics;2020-01-22

2. Effect of misfit dislocations on leakage currents in strained multiquantum well structures;Applied Physics Letters;1995-08-14

3. Properties of graded Inx0;Semiconductor Science and Technology;1995-02-01

4. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995

5. High‐speed characterization ofp‐i‐nphotodetectors by nonlinear photocurrent spectroscopy;Applied Physics Letters;1994-08

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