Enhancements in MBE-grown high-speed GaAs and In0.35Ga0.65As MQW laser structures using binary short-period superlattices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Vertically compact 16 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy
2. Proc. SPIE Conf. on High-Speed Electronics and Optoelectronics;Ralston,1992
3. Substrate temperature dependence of SQW alloy and superlattice lasers grown by MBE using As2
4. Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation
5. High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers
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1. Wavelength monitor based on two single-quantum-well absorbers sampling a standing wave pattern;Applied Physics Letters;2000-05-29
2. Wavelength tuning of high-speed InGaAs-GaAs-AlGaAs pseudomorphic MQW lasers via impurity-free interdiffusion;IEEE Photonics Technology Letters;1995-09
3. Impurity free selective interdiffusion of pseudomorphic InyGa1−yAs/GaAs multiple quantum well laser and modulator structures;Materials Science and Technology;1995-08
4. Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells;Journal of Electronic Materials;1995-07
5. Improved performance from pseudomorphic InyGa/sub 1-y/As-GaAs MQW lasers with low growth temperature AlxGa/sub 1-x/As short-period superlattice cladding;IEEE Photonics Technology Letters;1995-01
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