Near equilibrium growth of silicon by CVD II. The Si-I-H system-Reference-Cited by-同舟云学术

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Near equilibrium growth of silicon by CVD II. The Si-I-H system

Published:1983-12 Issue:1-3 Volume:65 Page:406-410
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hanssen J.H.L.,Saaman A.A.,De Moor H.H.C.,Giling L.J.,Bloem J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Near equilibrium growth of silicon by CVD I. The Si-Cl-H system

2. Chemical Transport Reactions;Schäfer,1964

3. Epitaxial Vapor Growth of Ge Single Crystals in a Closed-Cycle Process

4. Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide Process

5. Epitaxial Growth of Doped Silicon Using an Iodine Cycle

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal Growth;Ullmann's Encyclopedia of Industrial Chemistry;2007-04-15

2. Crystal Growth;Ullmann's Encyclopedia of Industrial Chemistry;2000-06-15

3. Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport;Journal of The Electrochemical Society;2000

4. JWC TO JEANNIE WELSH;The Carlyle Letters Online;1990-01-01

5. Selective vapor-phase deposition on patterned substrates;Critical Reviews in Solid State and Materials Sciences;1990-01

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