‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors-Reference-Cited by-同舟云学术

‘SIMOX’ (Separation by Ion Implantation of Oxygen): a Technology for high-temperature silicon sensors

Published:1990-04 Issue:1-3 Volume:23 Page:1003-1006
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Diem B.,Truche R.,Viollet-Bosson S.,Delapierre G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Patter formation resulting from faceted growth in zone melted thin films;Pfeiffer;Phys. Rev. Lett.,1985

2. New conditions for synthesizing SOI structures by high dose oxygen implantation;Stoemenos;J. Cryst. Growth,1985

3. Formation of high quality SIMOX structures;Bruel;European SOI Workshop, Meylan, France,1988

4. Influence of very high temperature annealing on physical and dielectric properties of implanted buried oxide layers;Baumgart;European SOI Workshop, Meylan, France,1988

5. Differential pressure/pressure transmitters applied with semiconductor sensors;Matsuoka;IEEE Trans. Ind. Electron.,1986

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