On pyramidal protrusions in anisotropic etching of <100 > silicon-Reference-Cited by-同舟云学术

On pyramidal protrusions in anisotropic etching of <100 > silicon

Published:1993-05 Issue:3 Volume:36 Page:233-240
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Bhatnagar Y.K.,Nathan A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Chemical etching of silicon, germanium, gallium arsenide, and gallium phosphide;Kern;RCA Rev.,1978

2. NH4OH-based etchants for silicon micromachining;Schnakenberg;Sensors and Actuators,1990

3. NH4OH-based etchants for silicon micromachining: influence of additives and stability of passivation layers;Schnakenberg;Sensors and Actuators A,1991

4. TMAHW etchants for silicon micromachining;Schnakenberg;Tech. Digest, 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA,24281991

5. Anisotropic etching of silicon in (CH3)4NOH solutions;Tabata;Tech. Digest, 6th Int. Conf. Solid-State Sensors and Actuators (Transducers '91), San Francisco, CA, USA,24281991

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