DIMES-01, a baseline BIFET process for smart sensor experimentation-Reference-Cited by-同舟云学术

DIMES-01, a baseline BIFET process for smart sensor experimentation

Published:1993-03 Issue:2 Volume:36 Page:139-147
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Nanver L.K.,Goudena E.J.G.,van Zeijl H.W.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Sensor technology strategy in silicon;Sarro;Sensors and Actuators,1992

2. High-performance BIFET process for analog integrated circuits;Nanver,1987

3. Native oxide growth on silicon surfaces in wet ambient;Morita;Extended Abstracts, 22nd (1990 Int.) Conf. on Solid State Devices and Materials, Sendai, Japan,1990

4. Design considerations for integrated high-frequency p-channel JFETs;Nanver;IEEE Trans. Electron Devices,1988

5. I-V characteristics of integrated n+pn− reachthrough diodes;Nanver;Solid-State Electron.,1989

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