Integrated silicon magnetotransistors: High sensitivity or high resolution?-Reference-Cited by-同舟云学术

Integrated silicon magnetotransistors: High sensitivity or high resolution?

Published:1990-06 Issue:1-3 Volume:22 Page:780-785
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Nathan A.,Baltes H.P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Noise correlations in dual-collector magnetotransistors;Nathan;IEEE Trans. Electron Devices,1989

2. Sensitivity and noise of a lateral bipolar magnetotransistor in CMOS technology;Popovic;Tech. Digest IEEE IEDM,1984

3. A magnetic sensor utilising an avalanching semiconductor device;Vinal;IBM J. Res. Dev.,1981

4. C.S. Roumenin and A. Chovet Bruit des magnetotransistors bipolaires lateraux, Phys. Abstr., 72-20M.

5. Low-frequency noise in modulation-doped AlAs/GaAs superlattice dual-drain magnetic sensors;Nathan;Sensors Actuators,1990

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