High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures-Reference-Cited by-同舟云学术

High-sensitivity Hall sensors using GaInAs/AlInAs pseudomorphic heterostructures

Published:1995-01 Issue:1-3 Volume:46 Page:298-301
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Del Medico S.,Benyattou T.,Guillot G.,Gendry M.,Oustric M.,Venet T.,Tardy J.,Hollinger G.,Chovet A.,Mathieu N.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference6 articles.

1. Narrowgap semiconductor magnetic field sensors and applications;Heremans;Semicond. Sci. Technol.,1993

2. Highly-sensitive InGaAs-2DEG Hall device made of pseudomorphic In0.52Al0.48As/In0.8Ga0.2As heterostructure;Sugiyama;Sensors and Actuators A,1992

3. V. Mosser, S. Contreras, S. Aboulhouda, Ph. Lorenzini, F. Kobbi, J.L. Robert and K. Zekentes, Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors, Proc. ESSDERC '93, Grenoble, France, 1993, pp. 659-662

4. A. Overs, G. Jacob, M.P. Besland, V. Drouot, G. Hollinger, M. Gauneau, D. Lecrosnier and J.L. Benchimol, Proc. 5th Int. Conf. InP and Related Materials, Paris, France, 1993, pp. 267–270

5. V. Drouot, M. Gendry, C. Santinelli, P. Viktorovitch, G. Hollinger, S. Elleuch and J.L. Pelouard, Appl. Phys. Lett., to be published

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Well surface roughness and fault density effects on the Hall mobility of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As/InP high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-09

2. Highly sensitive Al0.25Ga0.75As/In0.25Ga0.75As/GaAs quantum-well Hall devices with Si-delta-doped GaAs layer grown by LP-MOCVD;Sensors and Actuators A: Physical;1996-12

3. Magnetic sensors for nanotesla detection using planar Hall effect;Sensors and Actuators A: Physical;1996-05

4. Quantum-well Hall devices in Si-delta-doped Al/sub 0.25/Ga/sub 0.75/As/GaAs and pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/GaAs heterostructures grown by LP-MOCVD: performance comparisons;IEEE Transactions on Electron Devices;1996