Piezoresistivity effects in N-MOSFET devices-Reference-Cited by-同舟云学术

Piezoresistivity effects in N-MOSFET devices

Published:1992-07 Issue:1 Volume:34 Page:59-65
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Wanga Z.Z.,Suski J.,Collard D.,Dubois E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Piezoresistance in quantized conduction bands in silicon inversion layers;Dorda;J. Appl. Phys.,1971

2. Self-consistent results for n-type Si inversion layers;Stern;Phys. Rev. B,1972

3. IMPACT 1-2-3:an integrated 2D process/device simulator for MOS technology;Collard;Lecture Notes of Software Forum, NASECODE 5 Conf., Dublin, Ireland,1989

4. Cyclotron resonance in uniaxially stressed silicon. II. Nature of the covalent bond;Hensel;Phys. Rev. A,1965

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