Low-pressure sensors employing bossed diaphragms and precision etch-stopping-Reference-Cited by-同舟云学术

Low-pressure sensors employing bossed diaphragms and precision etch-stopping

Published:1990-02 Issue:1-3 Volume:21 Page:89-95
ISSN:0924-4247
Container-title:Sensors and Actuators A: Physical
language:en
Short-container-title:Sensors and Actuators A: Physical

Author:

Mallon Joseph R.,Pourahmadi Farzad,Petersen Kurt,Barth Phillip,Vermeulen Ted,Bryzek Janusz

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Metals and Alloys,Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. A diffused silicon pressure transducer with stress concentration at transverse gages;Wilner;23rd Int. Instrumentation Symp., Las Vegas, NV, U.S.A.,1977

2. A.D. Kurtz, J.R. Mallon and T.A. Nunn, U.S Patent 4 236 137, filed March 1979.

3. Recent semiconductor pressure sensors;Nishihara;Hitachi Rev.

4. Silicon pressure sensors for the range 2 kPa to 40 MPa.;Binder;Siemens Components, XX,1985

5. J. R. Mallon and A. D. Kurtz, Transducers employing convoluted diaphragms, U.S. Patent 4 467 657, filed March 7, 1983.

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