Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory-Reference-Cited by-同舟云学术

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Some physical properties of GaX (X=P, As and Sb) semiconductor compounds using higher-order perturbation theory

Published:2005-03 Issue:3-4 Volume:357 Page:305-311
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Jivani A.R.,Trivedi H.J.,Gajjar P.N.,Jani A.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Theory for structure and bulk modulus determination

2. An interatomic pair potential for cadmium selenide

3. Thermal Expansion Coefficient of Binary Semiconductors

4. Ab initio study of BAs under pressure

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1. Some physical properties of In x Ga1−x N y As1−y semiconducting quaternary alloys obtained using pseudopotential method;Indian Journal of Physics;2015-07-09

2. Phase diagrams of Si1-xGex solid solution: a theoretical approach;Semiconductor Physics Quantum Electronics and Optoelectronics;2012-03-29

3. Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds;Turkish Journal of Physics;2012-01-01

4. ELASTIC PROPERTIES OF GROUP IV SEMICONDUCTORS BY PSEUDOPOTENTIAL APPROACH;International Journal of Modern Physics B;2011-10-30

5. Some Properties of Si, Ge, and α-Sn Using Pseudopotential Theory;Communications in Theoretical Physics;2010-09

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