Diffusion and adsorption behavior of Si adatom on defect-induced H-terminated Si(001) surfaces
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Dimer vacancies and dimer-vacancy complexes on the Si(100) surface
2. Activation energy for surface diffusion of Si on Si(001): A scanning-tunneling-microscopy study
3. Kinetic stability of missing-dimer and single-atom defects on Si(100)
4. Adsorption and Diffusion of Si Atoms on the H-Terminated Si(001) Surface: Si Migration Assisted by H Mobility
5. Adsorption and Diffusion of Si Adatom on Hydrogenated Si(100) Surfaces
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1. On the interaction of polycyclic aromatic compounds with graphene;Carbon;2012-06
2. Carbon on Platinum Substrates: From Carbidic to Graphitic Phases on the (111) Surface and on Nanoparticles;The Journal of Physical Chemistry A;2009-09-08
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