Photoluminescence thermal quenching behaviors of Er-doped SiOx (x<2) prepared by ion implantation-Reference-Cited by-同舟云学术

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Photoluminescence thermal quenching behaviors of Er-doped SiOx (x<2) prepared by ion implantation

Published:2005-05 Issue:1-4 Volume:362 Page:208-213
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zhang C.S.,Xiao H.B,Wang Y.J.,Cheng Z.J.,Cheng X.L.,Zhang F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Erbium-doped glasses for fiber amplifiers at 1500 nm

2. Erbium implanted thin film photonic materials

3. S. Coffa, A. Polman, R.N. Schwartz (Eds.), Rare Earth Doped Semiconductors II, Mater. Res. Soc. Symp. Proc. 422, 1996.

4. Room‐temperature electroluminescence from Er‐doped crystalline Si

5. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

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1. Temperature dependence of sensitized Er3+ luminescence in silicon-rich oxynitride films;Nanoscale Research Letters;2014-09-12

2. Reversing the temperature dependence of the sensitized Er3+ luminescence intensity;Applied Physics Letters;2009-08-31

3. The formation of Er-oxide nanoclusters in SiO2 thin films with excess Si;Journal of Applied Physics;2009-07

4. Optical emission from erbium-doped silica nanowires;Journal of Applied Physics;2008-05-15

5. Enhancement of 1.5 μm emission in erbium-doped spin-on glass by furnace annealing;Thin Solid Films;2007-06

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