Electron- and hole-related electrical activity of InAs/GaAs quantum dots-Reference-Cited by-同舟云学术

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Electron- and hole-related electrical activity of InAs/GaAs quantum dots

Published:2007-12 Issue: Volume:401-402 Page:580-583
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Kruszewski P.,Dobaczewski L.,Markevich V.P.,Mitchell C.,Missous M.,Peaker A.R.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Quantum Dot Heterostructures;Bimberg,1998

2. Charge-state dependence of InAs quantum-dot emission energies

3. Detection of minority-carrier traps using transient spectroscopy

4. Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

5. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laplace deep level transient spectroscopy on self-assembled quantum dots;Journal of Applied Physics;2018-09-14

2. Growth and Characterization of Self-Assembled InAs Quantum Dots on Si (100) for Monolithic Integration by MBE;IEEE Transactions on Nanotechnology;2014-09

3. Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy;Journal of Nanophotonics;2012-02-24

4. Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs;SPIE Proceedings;2011-09-08

5. FORMATION OF A NOVEL HARD BINARY SiO2/QUANTUM DOT NANOCOMPOSITE WITH PREDICTABLE ELECTRICAL CONDUCTIVITY;Modern Physics Letters B;2010-01-10

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