Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se 2 thin films absorber layers using two step growth process-Reference-Cited by-同舟云学术

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Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se 2 thin films absorber layers using two step growth process

Published:2018-04 Issue: Volume:535 Page:272-277
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Korir Peter C.,Dejene Francis B.

Funder

African Laser centre

University of the Free State

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Five-source PVD for the deposition of Cu(In1−xGax)(Se1−ySy)2 absorber layers

2. Influence of substrate temperature on structural, optical, and electrical properties of flash evaporated CuIn0.81Al0.19Se2 thin films

3. Evaluation of the band alignment and valence plasmonic features of a DIBS grown Ga-doped Mg0.05Zn0.95O/CIGSe heterojunction by photoelectron spectroscopy

4. Growth and process identification of CuInS2 on GaP by chemical vapor deposition

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CIGS film from selenized of the electrodeposited CuIn alloy and CuGa oxide/hydroxide precursor;Applied Physics A;2021-10-11

2. Spectral Dependences of the Optical Absorption Coefficient of CuIn1 – хGaхSe2 Films Obtained by the Selenization Method;Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques;2020-09

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