Electrical characterization of deep levels in n-type GaAs after hydrogen plasma treatment
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Hydrogen in Semiconductors;Pearton,1992
2. Defects in single-crystal silicon induced by hydrogenation
3. Annealing behavior of the system of metastable hydrogen-related defects M3/M4 in n-GaAs
4. Hydrogen-related metastable defects in passivatedn-type GaAs grown by metal-organic vapor-phase epitaxy
5. New metastable defects in GaAs
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2. Non-epitaxial carrier selective contacts for III-V solar cells: A review;Applied Materials Today;2020-03
3. Metastable hydrogen-related defects in epitaxial n-GaAs studied by Laplace deep level transient spectroscopy;AIP Conference Proceedings;2014
4. dc-Hydrogen plasma induced defects in bulk n-Ge;Physica B: Condensed Matter;2012-08
5. Field dependence of the E1′ and M3′ electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide;Journal of Applied Physics;2012-05
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