The high hydrostatic pressure effect on shallow donor binding energies in GaAs–(Ga, Al)As cylindrical quantum well wires at selected temperatures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Hydrogenic impurity states in a quantum well: A simple model
2. Hydrogenic impurity states in a quantum well
3. Donor transition energies and their line strengths in GaAs/AlxGa1−xAs quantum-well structures in the presence of a magnetic field applied parallel to the interfaces
4. Optical-absorption spectra associated with impurities in a GaAs-(Ga,Al)As quantum well
5. Hydrogenic impurities in quantum wires in the presence of a magnetic field
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1. A Study on The Optical Properties of Long-Infrared Intraband Transitions of Quadruple Gaas/Alxga1-Xas Quantum Well Under Applied Electric Field;Cumhuriyet Science Journal;2023-12-28
2. Stark shift of binding energy for on and off-center donor impurities in quantum rings under the influence of charged rods electric fields;Solid State Sciences;2020-10
3. Exploring electro-optic effect and third-order nonlinear optical susceptibility of impurity doped quantum dots: Interplay between hydrostatic pressure, temperature and noise;Optics Communications;2017-03
4. Simultaneous influence of hydrostatic pressure and temperature on binding energy of impurity doped quantum dots in presence of noise;Journal of Alloys and Compounds;2017-02
5. Simultaneous influence of hydrostatic pressure and temperature on diamagnetic susceptibility of impurity doped quantum dots under the aegis of noise;Chemical Physics;2016-11
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