Electron transport mechanism of thermally oxidized ZnO gas sensors-Reference-Cited by-同舟云学术

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Electron transport mechanism of thermally oxidized ZnO gas sensors

Published:2010-11 Issue:21 Volume:405 Page:4509-4512
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Al-Hardan N.H.,Abdullah M.J.,Abdul Aziz A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. N. Taguchi, US Patent 3,625,756, December 1971.

2. Solid State Gas Sensor;Mosely,1987

3. Gas sensing properties of platinum dispersed-TiO2 thin film derived from precursor

4. A mechanism for sensing reducing gases with vanadium pentoxide films

5. Effect of palladium doping and film thickness on the H2-gas sensing characteristics of SnO2

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Innovative prototype of a zinc-oxide based optical gas sensor;Sensors and Actuators B: Chemical;2012-10

2. Effect of ambient temperature on electrical properties of nanostructure n-ZnO/p-Si heterojunction diode;Superlattices and Microstructures;2012-05

3. Microstructure and optical properties of ZnO/porous silicon nanocomposite films;Physica E: Low-dimensional Systems and Nanostructures;2011-10

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