Computational study on the effects of vacancy in wurtzite AlN (0001) and (0001(—)) surfaces
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Structural properties of Alumnum nitride compound;Mohammad;Indian J. Phys.,2014
2. Overview of band-edge and defect related luminescence in aluminum nitride;Koppe;J. Lumin.,2016
3. Nature of deep center emissions in GaN;Sedhain;Appl. Phys. Lett.,2010
4. First principle study of nitrogen vacancy in aluminium nitride;Ye;Chin. Phys.,2007
5. Electronic and structural properties of N-vacancy in AlN nanowires: a first-principles study;Qiao;Chin. Phys. B,2012
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1. Mechanism of rebar depassivation in concrete containing sulphate: A vicious cycle between sulphate adsorption and surface vacancy formation;Corrosion Science;2024-07
2. First-principles study of the effect of alkaline earth metal doping on the magnetic and photocatalytic properties of monolayer AlN: VN-Hi;Applied Surface Science;2023-11
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