Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences-Reference-Cited by-同舟云学术

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Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Published:2016-01 Issue: Volume:480 Page:196-200
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Omotoso E.,Meyer W.E.,Auret F.D.,Diale M.,Ngoepe P.N.M.

Funder

National Research Foundation

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. High-speed integrated logic with GaAs MESFET's

2. A comparative evaluation of new silicon carbide diodes and state-of-the-art silicon diodes for power electronic applications

3. The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes fromI–V–Tcharacteristics

4. E. Rhoderick, R. Williams, Oxford Science, Oxford, 1988.

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2. Large-area vertical Schottky barrier diodes based on 4H-SiC epilayers: Temperature-dependent electrical characteristics;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-03

3. DLTS study of the influence of annealing on deep level defects induced in xenon ions implanted n-type 4H-SiC;Journal of Materials Science: Materials in Electronics;2022-06-10

4. Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes;Electronics;2022-04-22

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