Properties of Si nanowires as a function of their growth conditions-Reference-Cited by-同舟云学术

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Properties of Si nanowires as a function of their growth conditions

Published:2014-04 Issue: Volume:439 Page:41-45
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Cavallini Anna,Carapezzi Stefania,Castaldini Antonio,Irrera Alessia

Funder

Naoki Fukata of NIMS, Tsukuba, Japan

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Nanowires in Nanoelectronics

2. Nanowire Transistor Performance Limits and Applications

3. Logic Gates and Computation from Assembled Nanowire Building Blocks

4. Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires

5. Single nanowire photovoltaics

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1. Influence of wet etching in KOH on defects in silicon nanowires formed by cryogenic dry etching;Journal of Physics: Conference Series;2020-12-01

2. The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires;Beilstein Journal of Nanotechnology;2019-10-31

3. Electronic levels in silicon MaWCE nanowires: evidence of a limited diffusion of Ag;Nanotechnology;2015-09-30

4. Influence of surface pre-treatment on the electronic levels in silicon MaWCE nanowires;Nanotechnology;2015-04-22

5. Silicon nanowires: synthesis, optical properties and applications;physica status solidi (c);2014-09-12

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