High temperature antistructure disorder in undoped ZnS-Reference-Cited by-同舟云学术

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High temperature antistructure disorder in undoped ZnS

Published:2009-12 Issue:23-24 Volume:404 Page:5006-5008
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Lott K.,Shinkarenko S.,Türn L.,Nirk T.,Öpik A.,Kallavus U.,Gorokhova E.,Grebennik A.,Vishnjakov A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Thermodynamic Estimations of Defect Equilibria and Vacancy Concentrations in ZnS

2. The Chemistry of Imperfect Crystals;Kröger,1974

3. Electrical conductivity of ZnS in additive coloration process

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High areal loading and long-life cycle stability of lithium-sulfur batteries achieved by a dual-function ZnS-modified separator;Chemical Engineering Journal;2020-06

2. Photoluminescence and Raman spectroscopic analysis of PV deposited ZnS thin films;Materials Research Bulletin;2018-09

3. Theoretical Studies on the Intrinsic Defects in ZnO and ZnS Crystal;CHEM J CHINESE U;2016

4. High temperature electrical conductivity in undoped ceramic ZnO;Crystal Research and Technology;2014-12-23

5. High temperature defect equilibrium in ZnS:Cu single crystals;physica status solidi (b);2010-04-23

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