Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL-Reference-Cited by-同舟云学术

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Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Published:2009-12 Issue:23-24 Volume:404 Page:4601-4603
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yablonskiy A.N.,Krasilnikova L.V.,Andreev B.A.,Kryzhkov D.I.,Kuznetsov V.P.,Krasilnik Z.F.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Ge dots and nanostructures grown epitaxially on Si

2. Room-temperature silicon light-emitting diodes based on dislocation luminescence

3. Erbium in silicon

4. Special features of the sublimational molecular-beam epitaxy of Si and its potentialities for growing Si:Er/Si structures

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Near-infrared emission bands of Er3+-doped YAP and LSO crystals;Journal of Luminescence;2011-08

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