Quantum cascade laser design based on impurity–band transitions of donors in Si/GeSi(111) heterostructures
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Terahertz quantum-cascade lasers
2. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
3. Intersubband electroluminescence from Si/SiGe cascade emitters at terahertz frequencies
4. Silicon-based injection lasers using electronic intersubband transitions in the L valleys
5. Theory and design of quantum cascade lasers in (111)n-type Si/SiGe
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stimulated emission on impurity – band optical transitions in semiconductors;Quantum Electronics;2015-02-27
2. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures;Semiconductors;2015-01
3. Long-Wavelength Photonic Circuits;Handbook of Silicon Photonics;2013-04-09
4. Evidence of impurity assisted tunneling in SiGe/Si heterostructures;AIP Conference Proceedings;2013
5. Influence of an electric field on the operation of terahertz intracenter silicon lasers;Journal of Applied Physics;2010-02
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