Grown-in defects in heavily phosphorus-doped Czochralski silicon-Reference-Cited by-同舟云学术

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Grown-in defects in heavily phosphorus-doped Czochralski silicon

Published:2009-12 Issue:23-24 Volume:404 Page:4619-4621
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Zeng Yuheng,Chen Jiahe,Ma Xiangyang,Zeng Zhidan,Yang Deren

Funder

Natural Science Foundation of China

Program PCSIT, Program 973

Research Fund for the Doctoral Program of Higher Education

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Latch-up in CMOS Technology: The Problem and Its Cure;Troutman,1986

2. Constitutional Supercooling during the Crystal Growth of Germanium and Silicon

3. Phosphorus Concentration Limitation in Czochralski Silicon Crystals

4. An Etch for Delineation of Defects in Silicon

5. Numerical Modeling of the Point Defect Aggregation during the Czochralski Silicon Crystal Growth

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1. The Effect of Impact Load on the Atomistic Scale Fracture Behavior of Nanocrystalline bcc Iron;Nanomaterials;2024-02-16

2. Fabrication of silicon electrodes used for micro electrochemical machining;Journal of Micromechanics and Microengineering;2020-05-04

3. Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors;Computational Materials Science;2016-03

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