First-order Raman scattering in a free-standing GaN nanowire with ring geometry
Author:
Funder
National Natural Science
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference38 articles.
1. Characteristics of light‐emitting diodes based on GaNp‐njunctions grown by plasma‐assisted molecular beam epitaxy
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1. Dispersive response of polar optical phonon modes on the dielectric and size effects in a nitride nanostructure;Journal of Applied Physics;2023-07-10
2. Dispersive Spectra of Phonon Modes and Fröhlich Electron–Phonon Coupling Properties in AlGaN Quantum Rings: Wurzite versus Zinc‐Blende Structure;physica status solidi (b);2022-11-19
3. Theoretical study on quasi-confined optical phonon modes in a free-standing cylindrical GaN nanowire with ring geometry: A resonant Raman scattering;Superlattices and Microstructures;2013-12
4. Second and third-harmonic generation of parallelogram quantum wires: electric field;Indian Journal of Physics;2013-11-20
5. Defect formation and magnetic properties of Co-doped GaN crystal and nanowire;Physica B: Condensed Matter;2013-10
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