Thermal annealing study of as-grown n-type MOCVD GaAs
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference10 articles.
1. Defect annealing of alpha-particle irradiated n-GaAs
2. An annealing study of electron irradiation‐induced defects in GaAs
3. Recombination‐enhanced annealing of theE1 andE2 defect levels in 1‐MeV‐electron–irradiatedn‐GaAs
4. Defect-enhanced annealing by carrier recombination in GaAs
5. Irradiation-induced defects inp-type GaAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of irradiation and annealing on deep levels in rhodium-doped p-GaAs grown by metal-organic chemical-vapor deposition;Journal of Applied Physics;2011-06
2. Radiation-induced deep levels in n-type GaAs grown by metal-organic chemical-vapor deposition;Physica B: Condensed Matter;2009-12
3. Thermal annealing behavior of deep levels in Rh-doped n-type MOVPE GaAs;Physica B: Condensed Matter;2009-12
4. Ruthenium related deep-level defects in n-type GaAs;Physica B: Condensed Matter;2009-12
5. 4d transition-metal impurity rhodium in GaAs grown by metal-organic chemical vapor deposition;Journal of Applied Physics;2008-12
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