Effect of Pb incorporation on the crystalline structure and crystallization kinetics of Ge1−xSe2Pbx system
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
2. Dielectric behaviour of GexSe100-x and Ge22Se68M10 (M = Ag, In, Pb, Cd) glassy alloys
3. Photodarkening in amorphous GeSnSe4Cu0.5 films
4. Electrical properties, crystallization kinetics and structure of microcrystalline Pb0.45Sn0.14Te0.39In0.02 system
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Compositional dependence of thermal transport and optical properties of Se85 Ge15-x Pbx (0≤ x ≤10) chalcogenide glassy alloys;Optical Materials;2019-11
2. Observation of Meyer-Neldel rule in amorphous films of Ge1–xSe2Pbx;The European Physical Journal Applied Physics;2009-01
3. Effects of Pb addition and heat treatment on optical properties of thermally evaporated Ge1−xSe2Pbx thin films;Journal of Physics and Chemistry of Solids;2008-11
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