Identification of Ga interstitials in GaAlNP-Reference-Cited by-同舟云学术

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Identification of Ga interstitials in GaAlNP

Published:2003-12 Issue: Volume:340-342 Page:466-469
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Vorona I.P,Thinh N.Q,Buyanova I.A,Chen W.M,Hong Y.G,Tu C.W

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Electron paramagnetic resonance of electron-irradiated GaP

2. Identification of the Ga Interstitial inAlxGa1−xAsby Optically Detected Magnetic Resonance

3. Observation of optically detected magnetic resonance signals in AlxGa1−xAs

4. Observation of the Ga Self-Interstitial Defect in GaP

5. Gaiself-interstitial-related defect in GaP studied by optically detected magnetic resonance

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relative concentration and structure of native defects in GaP;Physical Review B;2005-11-30

2. Formation of Ga interstitials in (Al,In)yGa1−yNxP1−x alloys and their role in carrier recombination;Applied Physics Letters;2004-10-04

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