Annealing of vacancies and interstitials in diamond-Reference-Cited by-同舟云学术

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Annealing of vacancies and interstitials in diamond

Published:2003-12 Issue: Volume:340-342 Page:67-75
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Iakoubovskii K.,Kiflawi I.,Johnston K.,Collins A.,Davies G.,Stesmans A.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Current problems in diamond: towards a quantitative understanding

2. Vacancy-related centers in diamond

3. Things we still don’t know about optical centres in diamond

4. 3H luminescence in electron-irradiated diamond samples and its relationship to self-interstitials

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Annealing Kinetics of Defects in CVD Diamond Irradiated by Xe Ions;Crystals;2024-06-12

2. Structural formation yield of GeV centers from implanted Ge in diamond;Materials for Quantum Technology;2024-05-29

3. Two-hole “desorption” mechanism of interstitial-vacancy pair generation visualized by avalanche-like color-center yield in synthetic diamond under ultrashort-pulse laser exposure;Optical Materials;2024-05

4. Suppression of thermal diffusion of vacancies across p + -n junction structures in diamond. Application to SnV centers by ion implantation;New Journal of Physics;2024-05-01

5. Creation of color centers in diamond by recoil implantation through dielectric films;Applied Physics Letters;2024-01-22

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