Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures-Reference-Cited by-同舟云学术

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Impurity photoconductivity in SiGe/Si:B multi-quantum-well heterostructures

Published:2003-12 Issue: Volume:340-342 Page:1065-1068
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Aleshkin V.Ya.,Antonov A.V.,Gavrilenko V.I.,Kozlov D.V.,Krasil’nik Z.F.,Lobanov D.N.,Novikov A.V.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Hole transport due to shallow acceptors along boron doped SiGe quantum wells

2. Symmetry and Strain-Induced Effects in Semiconductors,;Bir,1974

3. Shallow acceptors in strained Ge/Ge1−x Six heterostructures with quantum wells

4. Cubic contributions to the spherical model of shallow acceptor states

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative residual infrared photoconduction in the p-SiGe/Si heterostructures with selectively doped quantum wells;Journal of Applied Physics;2012-10-15

2. The effects of the magnetic field and dielectric screening on the diamagnetic susceptibility of a donor in a quantum well with anisotropic effective mass;Physica E: Low-dimensional Systems and Nanostructures;2010-03

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