Local strain relaxation in Czochralski-grown GeSi bulk alloys-Reference-Cited by-同舟云学术

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Local strain relaxation in Czochralski-grown GeSi bulk alloys

Published:2003-12 Issue: Volume:340-342 Page:854-857
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Yonenaga I.,Sakurai M.,Nonaka M.,Ayuzawa T.,Sluiter M.H.F.,Kawazoe Y.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Lattice parameters and local atomic structure of silicon-rich Si-Ge/Si (100) films

2. Bond-length relaxation inSi1−xGexalloys

3. Phase-correct bond lengths in crystallineGexSi1−xalloys

4. First-shell bond lengths inSixGe1−xcrystalline alloys

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-dimensional numerical simulation of crystal and crucible rotations during Czochralski growth of Ge_xSi_{1-x} single crystals;Turkish Journal of Electrical Engineering and Computer Sciences;2012-01-01

2. Atomistic approach to alloy scattering in Si1−xGex;Applied Physics Letters;2011-04-25

3. Creation of a stable and convex static meniscus, which is appropriate for the growth of a single crystal ribbon with specified half thickness;Materials Science in Semiconductor Processing;2010-12

4. Pressure difference across the free surface of a stable static meniscus in a possible Ge1−XSiX ribbon growth by edge-defined film-fed growth (E.F.G.) technique;Computational Materials Science;2009-02

5. New Compositionally-Ordered GeSi Nano Dots Fabricated with 1250 keV Electrons;Advanced Materials Research;2007-10

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