Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting-Reference-Cited by-同舟云学术

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Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting

Published:2003-12 Issue: Volume:340-342 Page:908-912
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Scarpulla M.A.,Daud U.,Yu K.M.,Monteiro O.,Liliental-Weber Z.,Zakharov D.,Walukiewicz W.,Dubon O.D.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Molecular beam epitaxy and properties of ferromagnetic III–V semiconductors

2. T. Dietl, arXiv: cond-mat/0306479 18 Jun 2003.

3. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers

4. Effect of the location of Mn sites in ferromagneticGa1−xMnxAson its Curie temperature

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3. Enhanced Ferromagnetism in Cylindrically Confined MnAs Nanocrystals Embedded in Wurtzite GaAs Nanowire Shells;Nano Letters;2019-09-09

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