Room temperature ferromagnetism in III–V and II–IV–V2 dilute magnetic semiconductors-Reference-Cited by-同舟云学术

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Room temperature ferromagnetism in III–V and II–IV–V2 dilute magnetic semiconductors

Published:2006-03 Issue: Volume:374-375 Page:430-432
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Storchak V.G.,Eshchenko D.G.,Luetkens H.,Morenzoni E.,Lichti R.L.,Marenkin S.F.,Pashkova O.N.,Brewer J.H.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

2. Electric-field control of ferromagnetism

3. Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

4. Novel ferromagnetic Mn‐doped CdGeAs 2 chalcopyrite with Curie point equal to 355 K

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Intrinsic point defects (vacancies and antisites) in CdGeP2 crystals;Journal of Applied Physics;2023-06-28

2. Structural, morphological and magnetic analysis of Cd–Co–S dilute magnetic semiconductor nanofilms;Journal of Magnetism and Magnetic Materials;2014-10

3. Dislocations in manganese-doped InSb;Inorganic Materials;2012-09-15

4. New ferromagnetics based on manganese-alloyed chalcopyrites AIIBIVC 2 V;Inorganic Materials;2010-12

5. Physicochemical foundations of synthesis of new ferromagnets from chalcopyrites AIIBIVC 2 V;Russian Journal of Inorganic Chemistry;2010-11

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