Theoretical evidence for random variation of series resistance of elementary diodes in inhomogeneous Schottky contacts
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriers
2. Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurements
3. Temperature dependence of the electrical characteristics of Yb/p‐InP tunnel metal‐insulator‐semiconductor junctions
4. Barrier inhomogeneities at Schottky contacts
5. On the existence of a distribution of barrier heights in Pd2Si/Si Schottky diodes
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